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| savantic semiconductor product specification silicon npn power transistors 2N6674 2n6675 description with to-3 package high voltage,high speed applications switching regulators inverters solenoid and relay drivers deflection circuits pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N6674 450 v cbo collector-base voltage 2n6675 open emitter 650 v 2N6674 300 v ceo collector-emitter voltage 2n6675 open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i b base current 5 a t a =25 6 p t total power dissipation t c =25 175 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6674 2n6675 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6674 300 v ceo(sus) collector-emitter sustaining voltage 2n6675 i c =0.2a ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =2a 1.0 v v cesat-2 collector-emitter saturation voltage i c =15a; i b =5a 5.0 v v besat base-emitter saturation voltage i c =10a; i b =2a 1.5 v 2N6674 v cb =450v; i e =0 i cbo collector cut-off current 2n6675 v cb =650v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =3v 15 40 h fe-2 dc current gain i c =10a ; v ce =2v 8 20 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 15 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N6674 2n6675 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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